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Same model may have multiple batches, images only for reference.
FQPF4N80 Real Image
Same model may have multiple batches, images only for reference.

FQPF4N80

Part No FQPF4N80
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2.2A TO-220F
Datasheet
FQPF4N80 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 880pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 067462-FQPF4N80
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQPF4N80 CAD Model

Description

The Fairchild/ON Semiconductor FQPF4N80 is a N-Channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 2.2A (Tc) @ 25°C
  • Maximum Rds On: 3.6 Ohm @ 1.1A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Input Capacitance: 880pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Power Dissipation: 43W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220F
  • Mounting: Through Hole
  • Popularity: Medium
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9385 $61.0025
150+ $0.7701 $115.5150
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6979 $289.6285
555+ $0.6257 $347.2635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 200 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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