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Same model may have multiple batches, images only for reference.
HUF75623P3 Real Image
Same model may have multiple batches, images only for reference.

HUF75623P3

Part No HUF75623P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 22A TO-220AB
Datasheet
HUF75623P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 52nC @ 20V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 64 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040529-HUF75623P3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Motor Drive & Control, Audio
Ultra Librarian 3D Model Ultra Librarian HUF75623P3 CAD Model

Description

The Fairchild/ON Semiconductor HUF75623P3 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 22A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 22A (Tc) @ 25°C
  • Maximum Power Dissipation: 85W (Tc)
  • Maximum Rds On: 64 mOhm @ 22A, 10V
  • Applications: Power management, motor drive & control, and audio applications
  • Package: TO-220AB
  • Mounting: Through Hole
  • Status: Obsolete(EOL)
  • Popularity: Medium
  • Supply and Demand: Limited

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