The Fairchild/ON Semiconductor HUF75852G3 is an N-channel MOSFET with a drain-source breakdown voltage of 150V.

• Drain-Source Breakdown Voltage: 150V
• Maximum Rds On: 16 mOhm @ 75A, 10V
• Maximum Gate-Source Voltage: ±20V
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 480nC @ 20V
• Maximum Input Capacitance: 7690pF @ 25V
• Power Dissipation (Max): 500W (Tc)
• Continuous Drain Current: 75A (Tc) @ 25°C
• Package: TO-247
• Dimension: TO-247-3
• Applications: Power supplies, motor control, and lighting
• Status: Active
• Packaging: Tube/rail packaging of 450 pcs