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IRF634B

Part No IRF634B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 8.1A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 4.05A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069301-IRF634B
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF634B CAD Model

Description

The IRF634B is a MOSFET technology semiconductor device from Fairchild/ON Semiconductor.

  • Category: Discrete semiconductor product
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Status: Not for new designs
  • Temperature Range: -55°C to 150°C
  • Case/Package: TO-220AB
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 8.1A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 1000pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id, Vgs: 450 mOhm @ 4.05A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4377 $59.0895
325+ $0.3592 $116.7400
500+ $0.3477 $173.8500
690+ $0.3361 $231.9090
890+ $0.3257 $289.8730
1,190+ $0.2922 $347.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,620 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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