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Same model may have multiple batches, images only for reference.
IRFH7932TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH7932TRPBF

Part No IRFH7932TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 24A PQFN56
Datasheet
IRFH7932TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 51nC @ 4.5V
Max Input Capacitance 4270pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.4W (Ta)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6) Single Die
Dimension 8-PowerVDFN
Win Source Part Number 017600-IRFH7932TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFH7932TRPBF CAD Model

Description

The Infineon Technologies 017600-IRFH7932TRPBF is an N-Channel MOSFET designed for use in various applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 24A (Ta) and 104A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 100μA
  • Maximum Gate Charge: 51nC @ 4.5V
  • Maximum Input Capacitance: 4270pF @ 15V
  • Maximum Rds On @ Id,Vgs: 3.3 mOhm @ 25A, 10V
  • Package: PQFN (5x6) single die
  • Popularity: Common-used part with high popularity in the market.

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