The IRFR110A is an N-Channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Fairchild/ON Semiconductor. This power MOSFET is designed for high-speed switching applications. Its key feature is its low on-resistance (RDS(on)), which minimizes power dissipation and improves efficiency. It's suitable for applications requiring fast switching and high current handling capabilities.

Applications

• DC-DC converters
• Power inverters
• Motor control
• Solid-state relays
• High-frequency switching power supplies

Features

• N-Channel enhancement mode
• Low on-resistance (RDS(on))
• High-speed switching
• Avalanche rated
• Easy to drive
• Available in a TO-251 (IPAK) package

Benefits

• Improved power efficiency due to low RDS(on).
• Fast switching speeds enable higher operating frequencies.
• Avalanche rating provides robustness against voltage transients.
• Simple gate drive requirements ease circuit design.
• Compact package size allows for high-density board layouts.

Technical Specifications

The IRFR110A has a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) rating of 3.8A. The on-resistance (RDS(on)) is typically 0.4 ohms at a gate-source voltage (VGS) of 10V. The gate threshold voltage (VGS(th)) is typically between 2V and 4V. The device is avalanche rated, providing protection against voltage transients. The operating temperature range is typically -55°C to +175°C. It is available in a TO-251 (IPAK) package.

The IRFR110A utilizes advanced MOSFET technology to achieve low on-resistance and high switching speeds. Its robust design and avalanche rating make it suitable for demanding power switching applications.