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Same model may have multiple batches, images only for reference.
IRFS250B Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRFS250B

Part No IRFS250B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 21.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 10.65A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 123 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 25 V
Power Dissipation (Max) 90W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PF
Package / Case TO-3P-3 Full Pack
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 605305-IRFS250B
Ultra Librarian 3D Model Ultra Librarian IRFS250B CAD Model

Description

The 605305-IRFS250B is a single N-channel MOSFET transistor.

  • Drain to Source Voltage: 200V
  • Continuous Drain Current: 21.3A @ 25°C
  • Maximum Rds On: 85mOhm @ 10.65A and 10V
  • Maximum Power Dissipation: 90W
  • Operating Temperature: -55°C to 150°C
  • Package: TO-3P-3 Full Pack
  • Mounting Type: through-hole
  • Gate Charge: 123nC @ 10V
  • Input Capacitance: 3400pF @ 25V
  • Status: currently active
  • Manufacturer: Fairchild/ON Semiconductor.

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