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IRFS450B

Part No IRFS450B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 500V 9.6A 3-Pin(3+Tab) TO-3PF Tube / MOSFET N-CH 500V 9.6A TO-3PF
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 9.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 113nC @ 10V
Max Input Capacitance 3800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 96W (Tc)
Maximum Rds On at Id,Vgs 390 mOhm @ 4.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PF
Dimension SC-94
Win Source Part Number 1047143-IRFS450B
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 360
Family Name IRFS450B
Introduction Date November 16, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IRFS450B CAD Model

Description

The Fairchild/ON Semiconductor IRFS450B is an N-channel MOSFET that has a maximum power dissipation of 96W (Tc) and a drain-source breakdown voltage of 500V.

  • Maximum Power Dissipation: 96W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Maximum Rds On at Id,Vgs: 390 mOhm @ 4.8A, 10V
  • Package: TO-3PF
  • Dimension: SC-94
  • Supply and Demand Status: Sufficient

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