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IRFS614B

Part No IRFS614B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 275 pF @ 25 V
Power Dissipation (Max) 22W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
Standard Package 1,664 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 605330-IRFS614B
Ultra Librarian 3D Model Ultra Librarian IRFS614B CAD Model

Description

The 605330-IRFS614B is a single N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Series: Fairchild/ON Semiconductor
  • Package: Bulk
  • Standard Package: 1,664 pieces
  • Vdss: 250 V
  • Id: 2.8 A
  • Rds On: 2 Ohm @ Id of 1.4 A and Vgs of 10 V
  • Vgs(th): 4 V @ Id of 250 µA
  • Power Dissipation: 22 W
  • Temperature Range: -55°C to 150°C
  • Product Status: Active
  • Drive Voltage: 10 V

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