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Same model may have multiple batches, images only for reference.
IRLR220ATF
Same model may have multiple batches, images only for reference.

IRLR220ATF

Part No IRLR220ATF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CH/LL/200V/4.6A/0.8 OHM@VGS=5V/SUBSTITUTE Of IRLR220TF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-252
Continuous Drain Current (ID) 4.6 A
Drain to Source Breakdown Voltage 200 V
Drain to Source Resistance 800 mΩ
Element Configuration Single
Fall Time 6 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Power Dissipation 2.5 W
Rise Time 6 ns
RoHS Compliant
Turn-Off Delay Time 24 ns
Win Source Part Number 1065633-IRLR220ATF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRLR220ATF CAD Model

Description

The IRLR220ATF is a MOSFET transistor from Fairchild/ON Semiconductor that is designed for use in RF applications.

  • Power Dissipation: 2.5 W
  • Rise and Fall Time: 6 ns
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Continuous Drain Current: 4.6 A
  • Drain to Source Breakdown Voltage: 200 V
  • Gate to Source Voltage (Vgs): 20 V
  • Drain to Source Resistance: 800 mΩ
  • Package: TO-252
  • RoHS Compliant: Yes

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