The KSC2881YTF is a high-voltage NPN epitaxial planar silicon transistor manufactured by ON Semiconductor (formerly Fairchild Semiconductor). It is designed for use in high-voltage switching and amplification applications.

Applications:

• Electronic ballast circuits
• Switching regulators
• High-voltage inverters
• Power amplifiers
• Lighting systems

Features:

• High collector-emitter breakdown voltage (VCEO = 300V)
• High collector current (IC = 1A)
• Low saturation voltage
• Fast switching speed
• High power dissipation capability

Benefits:

• Enables efficient and reliable high-voltage switching
• Reduces power loss due to low saturation voltage
• Allows for compact and lightweight designs due to high power dissipation capability
• Improves system performance with fast switching speeds
• Offers a cost-effective solution for high-voltage applications

Technical Specifications:

The KSC2881YTF transistor features a collector-emitter breakdown voltage (VCEO) of 300V, a collector-base breakdown voltage (VCBO) of 400V, and an emitter-base breakdown voltage (VEBO) of 6V. It has a continuous collector current (IC) of 1A and a peak collector current (ICM) of 2A. The transistor has a power dissipation (PC) of 1W at an ambient temperature of 25°C. The current gain (hFE) is typically between 85 and 170.

This transistor is commonly available in a TO-92 package. It is RoHS compliant, making it suitable for use in environmentally sensitive applications.

The KSC2881YTF provides a robust and reliable solution for various high-voltage applications. Its key characteristics, including its high breakdown voltage, current handling capacity, and fast switching speed, make it an ideal choice for designers seeking efficient and compact power control components.