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Same model may have multiple batches, images only for reference.
SSD2009ATF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

SSD2009ATF

Part No SSD2009ATF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 50V 3A 8-SOIC
Datasheet
SSD2009ATF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 130 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 25nC @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1102236-SSD2009ATF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSD2009ATF CAD Model

Description

The Fairchild/ON Semiconductor 432800 is a dual N-channel MOSFET with a logic level gate. Fairchild/ON Semiconductor

  • Mounting: Surface-mount technology (SMT)
  • Case/Package: 8-SOP
  • Supply and Demand: Sufficient
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current @ 25°C: 3A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Rds On @ Id,Vgs: 130 mOhm @ 3A, 10V

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