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SSH22N50A Real Image1 SSH22N50A Real Image2
Same model may have multiple batches, images only for reference.
SSH22N50A Real Image1 SSH22N50A Real Image2
SSH22N50A Real Image1 SSH22N50A Real Image2
Same model may have multiple batches, images only for reference.

SSH22N50A

Part No SSH22N50A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 22A TO-3P
Datasheet
SSH22N50A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 236nC @ 10V
Max Input Capacitance 5120pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 278W (Tc)
Maximum Rds On at Id,Vgs 250 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1102240-SSH22N50A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSH22N50A CAD Model

Description

The Fairchild/ON Semiconductor SSH22N50A is a through hole N-channel MOSFET with a drain-source breakdown voltage of 500V and continuous drain current of 22A.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 22A
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 250 mOhm @ 11A and 10V
  • Power Dissipation (Max): 278W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package: TO-3P-3, SC-65-3
  • Category: Discrete semiconductor products
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Sufficient

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