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Same model may have multiple batches, images only for reference.
MJW16212
Same model may have multiple batches, images only for reference.

MJW16212

Part No MJW16212
Manufacturer Freescale Semiconductor - NXP
Catalog Transistors (BJT) - Single
Description POWER BIPOLAR TRANSISTOR / Bipolar (BJT) Transistor NPN 650 V 10 A 2.75MHz 150 W Through Hole TO-247
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Mfr Freescale Semiconductor - NXP
Series SCANSWITCH™
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 650 V
Vce Saturation (Max) @ Ib, Ic 1V @ 2.2A, 5.5A
Current - Collector Cutoff (Max) 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce 4 @ 10A, 5V
Power - Max 150 W
Frequency - Transition 2.75MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 0000.00.0000
Standard Package 61 pcs
Win Source Part Number 1382891-MJW16212
Ultra Librarian 3D Model Ultra Librarian MJW16212 CAD Model

Description

The 1382891-MJW16212 is a single bipolar transistor from the SCANSWITCH™ series.

  • Series: SCANSWITCH™
  • Package: Bulk
  • Standard Package: 61 pieces
  • Power: 150W
  • Collector-Emitter Breakdown Voltage: 650V
  • Collector Current (Ic): 10A
  • Transistor Type: NPN
  • Vce Saturation: 1V @ 2.2A and 5.5A
  • Collector Cutoff Current: 250μA
  • DC Current Gain (hFE): 4 @ 10A and 5V
  • Frequency Transition: 2.75MHz
  • Mounting Type: Through Hole
  • Package: TO-247-3
  • Operating Temperature: -55°C to 150°C
  • RoHS: Non-Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)

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