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Same model may have multiple batches, images only for reference.
2SK3529-01
Same model may have multiple batches, images only for reference.

2SK3529-01

Part No 2SK3529-01
Manufacturer Fuji Electric
Catalog Transistors - FETs, MOSFETs - RF
Description Power Mosfet, N-ch, Vdss 800V, Rds(on) 1.46 Ohms, ID+/-7A, TO-220AB, Pd 195W, VGS+/-30V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220AB
Drain to Source Breakdown Voltage 800 V
Drain to Source Resistance 1.9 Ω
Drain to Source Voltage (Vdss) 800 V
Element Configuration Single
Forward Voltage 900 mV
Gate to Source Voltage (Vgs) 30 V
Height 15.0114 mm
Length 9.9822 mm
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
Power Dissipation 195 W
RoHS Compliant
Turn-Off Delay Time 40 ns
Turn-On Delay Time 21 ns
Width 4.4958 mm
Win Source Part Number 1037776-2SK3529-01
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK3529-01 CAD Model

Description

The Fuji Electric 1037776-2SK3529-01 is a power MOSFET transistor that is designed for use in various electronic applications.

  • Drain to Source Voltage (Vdss): 800 V
  • Power Dissipation: 195 W
  • RoHS Compliance: Compliant
  • Maximum Operating Temperature: 150 °C
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7842 $58.8150
180+ $0.6433 $115.7940
280+ $0.6237 $174.6360
385+ $0.6029 $232.1165
500+ $0.5833 $291.6500
665+ $0.5232 $347.9280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,601 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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