The G2305 is a P-Channel MOSFET transistor from Goford Semiconductor. It has a drain to source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.8A at 25°C. The G2305 has a low on-resistance (Rds On) of 50mOhm at a gate-source voltage (Vgs) of 4.5V. It is designed for surface mount applications and comes in a compact TO-236-3, SC-59, SOT-23-3 package. The G2305 has a gate charge (Qg) of 7.8nC and a maximum gate-source voltage (Vgs) of ±12V. It operates at a temperature range of -55°C to 150°C and is an active product from Goford Semiconductor.

• Vdss: 20V
• Id: 4.8A @ 25°C
• Rds On: 50mOhm @ Vgs = 4.5V
• Package: TO-236-3, SC-59, SOT-23-3
• Qg: 7.8nC
• Vgs (max): ±12V
• Operating Temperature: -55°C to 150°C