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IRFP243

Part No IRFP243
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1275 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875147-IRFP243
Ultra Librarian 3D Model Ultra Librarian IRFP243 CAD Model

Description

The 875147-IRFP243 is an N-Channel MOSFET transistor used in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 18A @ 25°C
  • Maximum On-State Resistance (Rds On): 220mOhm @ 10A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ a current of 250µA
  • Maximum Power Dissipation: 150W
  • Operating Temperature Range: -55°C to 150°C
  • Mounting: Through-hole
  • Package: TO-247-3 case
  • Gate Charge (Qg): 60nC @ 10V
  • Input Capacitance (Ciss): 1275pF @ 25V
  • Series: Harris Corporation series
  • Package: Bulk package
  • Pieces: 1

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4291 $50.0185
90+ $1.1726 $105.5340
135+ $1.1359 $153.3465
185+ $1.0993 $203.3705
240+ $1.0626 $255.0240
315+ $0.9527 $300.1005
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,130 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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