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Same model may have multiple batches, images only for reference.
IRFP341
Same model may have multiple batches, images only for reference.

IRFP341

Part No IRFP341
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 350 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Standard Package 233 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 875152-IRFP341
Ultra Librarian 3D Model Ultra Librarian IRFP341 CAD Model

Description

The 875152-IRFP341 is a single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Harris Corporation.

  • Category: discrete semiconductor products
  • Drain-to-source voltage (Vdss): 350V
  • Continuous drain current (Id): 11A @ 25°C
  • Maximum on-resistance (Rds On): 550mOhm @ a drain current (Id) of 5.5A and a gate-source voltage (Vgs) of 10V
  • Gate threshold voltage (Vgs(th)): 4V @ an Id of 250μA
  • Maximum power dissipation: 150W
  • Operating temperature range: -55°C to 150°C
  • Status: Active

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155+ $0.6608 $102.4240
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560+ $0.5369 $300.6640
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