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RFG45N06

Part No RFG45N06
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET / N-Channel 60 V 45A (Tc) 131W (Tc) Through Hole TO-247
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Harris Corporation
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 25 V
Power Dissipation (Max) 131W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names HARHARRFG45N06,2156-RFG45N06
Standard Package 1
Win Source Part Number 1018480-RFG45N06
Ultra Librarian 3D Model Ultra Librarian RFG45N06 CAD Model

Description

The RFG45N06 is an N-Channel enhancement mode power MOSFET. It's designed for high-speed switching applications and is commonly used in power supplies, DC-DC converters, and motor control circuits. This MOSFET is known for its low on-resistance, fast switching speed, and ruggedness.

Applications:

  • Switching power supplies
  • DC-DC converters
  • Motor control circuits
  • Uninterruptible power supplies (UPS)
  • Solid-state relays

Features:

  • Low on-resistance (RDS(on))
  • Fast switching speed
  • High avalanche energy rating
  • Simple drive requirements
  • RoHS compliant

Benefits:

  • Reduces power losses and improves efficiency
  • Enables high-frequency operation
  • Provides robust performance under transient conditions
  • Simplifies gate drive circuit design
  • Environmentally friendly

Specifications:

The RFG45N06 typically features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 45A. Its on-resistance (RDS(on)) is typically in the milliohm range, minimizing conduction losses. The gate threshold voltage (VGS(th)) is typically between 2V and 4V. The device also features a fast switching speed with low gate charge. The operating temperature range is usually from -55°C to +175°C. It is typically available in a TO-220 package.

The RFG45N06's design emphasizes efficiency and reliability. Its low on-resistance reduces power dissipation, leading to cooler operation and improved overall system efficiency. The fast switching speed allows for high-frequency operation, reducing the size and cost of passive components. The high avalanche energy rating provides robust performance under transient conditions, enhancing the device's reliability in demanding applications.

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