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20N65C3

Part No 20N65C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 20.7A TO-220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 1mA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 13.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 151149-20N65C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 20N65C3 CAD Model

Description

20N65C3 MOSFET

The 20N65C3 is a powerful N-channel MOSFET suitable for a wide range of power applications. Known for its low on-state resistance and high-speed switching, it delivers high efficiency in power conversion systems.

  • Features:
  • Low RDS(on) for minimized conduction losses
  • High-speed switching
  • Robust construction with enhanced reliability

Applications:

  • Switching power supplies
  • Motor drives
  • Inverters

Benefits: This MOSFET's ability to handle high voltages and currents makes it an indispensable component in modern power electronics, ensuring effective and reliable operation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8408 $58.8560
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6468 $232.8480
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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