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24N025S

Part No 24N025S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 100A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 27A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 90μA
Max Gate Charge 52nC @ 5V
Max Input Capacitance 6530pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 075213-24N025S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 24N025S CAD Model

Description

24N025S: N-Channel MOSFET

The 24N025S is a reliable N-channel MOSFET transistor designed to deliver high-speed switching and efficient power management. Its low on-resistance and high current capacity make it ideal for a range of power applications.

  • Applications/Projects: Power supply circuits, Motor controllers, Amplifiers, Switching regulators
  • Features and Benefits:
    • Supports a high drain-source voltage for extensive power handling
    • Low on-state resistance reduces power loss
    • Fast switching speed enhances performance in high-frequency operations
    • Robust design for reliability in demanding conditions
  • Additional Details: The 24N025S is available in multiple package types, accommodating different thermal and space needs in various electronic devices.

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