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AUIRFS3306

Part No AUIRFS3306
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4520 pF @ 50 V
Power Dissipation (Max) 230W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567172-AUIRFS3306
Ultra Librarian 3D Model Ultra Librarian AUIRFS3306 CAD Model

Description

The AUIRFS3306 is a N-Channel MOSFET transistor from Infineon Technologies. It is part of the HEXFET series in the Discrete Semiconductor Products category.

  • Type: N-Channel MOSFET
  • Series: HEXFET
  • Category: Discrete Semiconductor Products
  • Package: Tube
  • Standard Package: 50 pieces
  • Mounting Type: Surface mount
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 120A @ 25°C
  • Rds On (Max): 4.2mOhm @ 75A and 10V
  • Vgs(th) (Max): 4V @ 150μA
  • Power Dissipation (Max): 230W

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7172 $60.1020
85+ $1.4090 $119.7650
130+ $1.3650 $177.4500
175+ $1.3210 $231.1750
230+ $1.2769 $293.6870
305+ $1.1448 $349.1640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,100 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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