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AUIRLL2705

Part No AUIRLL2705
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 5.2A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 25 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Standard Package 80 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567218-AUIRLL2705
Ultra Librarian 3D Model Ultra Librarian AUIRLL2705 CAD Model

Description

The AUIRLL2705 is an N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET
  • Product Type: Discrete Semiconductor
  • Drain to Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id) @ 25°C: 5.2A
  • Rds On (Max) @ 3.8A and 10V: 40mOhm
  • Gate Charge (Qg) @ 10V: 48 nC
  • Input Capacitance (Ciss) @ 25V: 870 pF
  • Maximum Power Dissipation: 1W
  • Mounting Type: Surface Mount
  • Package: TO-261-4, TO-261AA
  • Product Status: Obsolete
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,400 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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