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Same model may have multiple batches, images only for reference.
BFN18H6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

BFN18H6327XTSA1

Part No BFN18H6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANSISTOR AF SOT89-4
Datasheet
BFN18H6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 500mV @ 2mA, 20mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 30 @ 30mA, 10V
Maximum Power Dissipation 1.5W
Frequency - Transition 70MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT89
Win Source Part Number 1023233-BFN18H6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFN18H6327XTSA1 CAD Model

Description

The BFN18H6327XTSA1 is a NPN transistor designed for discrete semiconductor products manufactured by Infineon Technologies.

  • Application: General Purpose Switching
  • Maximum Current Collector: 200mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
  • Typical Gain (hFE) (Min): 30 @ 30mA, 10V
  • Maximum Power Dissipation: 1.5W
  • Package: PG-SOT89
  • Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,610 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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