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BCR133SE6327BTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCR133SE6327BTSA1

Part No BCR133SE6327BTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.25W SOT363
Datasheet
BCR133SE6327BTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Frequency - Transition 130MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 1022684-BCR133SE6327BTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCR133SE6327BTSA1 CAD Model

Description

The Infineon Technologies BCR133SE6327BTSA1 is a dual NPN pre-biased transistor with a maximum collector-emitter breakdown voltage of 50V.

  • Maximum Current Collector: 100mA
  • Maximum Power Dissipation: 250mW
  • Typical Gain (hFE): 30 @ 5mA, 5V
  • Package: PG-SOT363-6
  • Status: Obsolete (EOL)
  • Popularity: Not popular
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
620+ $0.1051 $65.1620
1,500+ $0.0864 $129.6000
2,325+ $0.0836 $194.3700
3,200+ $0.0809 $258.8800
4,140+ $0.0782 $323.7480
5,540+ $0.0701 $388.3540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 620 pcs
Order Increment : 1 pcs
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