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BSB165N15NZ3GXUMA2

Part No BSB165N15NZ3GXUMA2
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description TRENCH >=100V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 75 V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2-9
Package / Case DirectFET™ Isometric MZ
Ultra Librarian 3D Model Ultra Librarian BSB165N15NZ3GXUMA2 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2597 $51.9731
54+ $1.8542 $100.1268
84+ $1.7962 $150.8808
116+ $1.7383 $201.6428
149+ $1.6803 $250.3647
200+ $1.5065 $301.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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