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Same model may have multiple batches, images only for reference.
BSC019N04NSG Infineon Technologies
Same model may have multiple batches, images only for reference.

BSC019N04NSG

Part No BSC019N04NSG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSC019N04 - 12V-300V N-CHANNEL P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 204A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 20 V
Power Dissipation (Max) 2.5W (Ta), 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 717967-BSC019N04NSG
Ultra Librarian 3D Model Ultra Librarian BSC019N04NSG CAD Model

Description

The 717967-BSC019N04NSG is a N-Channel MOSFET transistor from the OptiMOS™ 3 series by Infineon Technologies.

  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id) @ 25°C: 29A (Ta), 204A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
  • Gate Charge (Qg): 108nC @ 10V
  • Package Type: 8-PowerTDFN
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9384 $51.6120
130+ $0.7700 $100.1000
205+ $0.7459 $152.9095
280+ $0.7219 $202.1320
360+ $0.6978 $251.2080
480+ $0.6256 $300.2880
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Availability: 10,000 pieces
MOQ: 55 pcs
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