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BSC019N04NSG

Name: BSC019N04NSG
Brand: Infineon Technologies
SKU: 717967
Availability: InStock
Rating: 5 (134 reviews)

Part No	BSC019N04NSG
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	BSC019N04 - 12V-300V N-CHANNEL P
Sample
Rohs State	Need to verify
ECAD Module

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Shipping Information

Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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Pricing & Ordering $0.7722

Quantity

Unit Price

Ext. Price

50+

$1.0180

$50.900

120+

$0.8350

$100.200

190+

$0.8090

$153.710

260+

$0.7830

$203.580

335+

$0.7570

$253.595

445+

$0.6790

$302.155

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Availability: 142,000 pieces

MOQ: 50 pcs

Order Increment : 1 pcs

Qty:

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Products specifications

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs	108 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8800 pF @ 20 V
Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN
Standard Package	1 pcs
HTSUS	0000.00.0000
Win Source Part Number	717967-BSC019N04NSG
Fake Threat In the Open Market	40pct.

Description

The 717967-BSC019N04NSG is a N-Channel MOSFET transistor from the OptiMOS™ 3 series by Infineon Technologies. It is designed for use in discrete semiconductor products, specifically in transistors and FETs. With a drain to source voltage (Vdss) of 40V, it is suitable for low to moderate voltage applications. The continuous drain current (Id) at 25°C is 29A (Ta), 204A (Tc), making it suitable for various power applications. The Rds On (Max) at Id, Vgs is 1.9mOhm at 50A and 10V, indicating low on-resistance and efficient power handling. It has a gate charge (Qg) of 108nC at 10V, ensuring fast switching performance. The package type is 8-PowerTDFN, allowing for easy surface mount installation. With a temperature range of -55°C to 150°C, it can withstand a wide range of operating conditions. The 717967-BSC019N04NSG is an active product from Infineon Technologies, known for its high-quality semiconductor solutions.