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BSC030N03MSGATMA1

Part No BSC030N03MSGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 73nC @ 10V
Max Input Capacitance 5700pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 097185-BSC030N03MSGATMA1
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 5k pcs
Ultra Librarian 3D Model Ultra Librarian BSC030N03MSGATMA1 CAD Model

Description

BSC030N03MSGATMA1

The BSC030N03MSGATMA1 is an innovative N-channel MOSFET designed for high efficiency and durability in demanding applications. Its advanced architecture brings excellent thermal management and switching performance.

  • Applications/Projects:
    • High-frequency DC-DC Converters
    • Consumer Electronics
    • Smart Metering
  • Features and Benefits:
    • High current handling capability
    • Optimized for low-noise operation
    • Minimal latency in switching
    • Eco-friendly design
  • Additional Details:
    • Voltage rating: 30V
    • RoHS compliant for green manufacturing

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0395 $50.9875
53+ $1.9080 $101.1240
82+ $1.8422 $151.0604
117+ $1.7106 $200.1402
152+ $1.6448 $250.0096
190+ $1.5790 $300.0100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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