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Same model may have multiple batches, images only for reference.
BSC034N03LSGATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSC034N03LSGATMA1

Part No BSC034N03LSGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A TDSON-8
Datasheet
BSC034N03LSGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 4300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 57W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024328-BSC034N03LSGATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC034N03LSGATMA1 CAD Model

Description

The Infineon Technologies BSC034N03LSGATMA1 is an N-Channel MOSFET transistor in a PG-TDSON-8 package.

  • Channel Type: N-Channel
  • Package: PG-TDSON-8
  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current: 22A
  • On-Resistance: 3.4mOhm
  • Ideal for: power management applications, motor control, and DC-DC converters
  • RoHS Compliant: Yes
  • Packaging: reel
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 4300pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8671 $52.0260
125+ $0.8112 $101.4000
195+ $0.7832 $152.7240
275+ $0.7273 $200.0075
360+ $0.6993 $251.7480
450+ $0.6714 $302.1300
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