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Same model may have multiple batches, images only for reference.
BSO083N03MS G
Same model may have multiple batches, images only for reference.

BSO083N03MS G

Part No BSO083N03MS G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 11A 8-Pin DSO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOIC
Continuous Drain Current (ID) 11 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 8.3 mΩ
Fall Time 5.4 ns
Gate to Source Voltage (Vgs) 20 V
Halogen Free Halogen Free
Input Capacitance 2.1 nF
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.56 W
Min Operating Temperature -55 °C
Number of Pins 8
Power Dissipation 1.56 W
Rds On Max 8.3 mΩ
Rise Time 5 ns
RoHS Compliant
Turn-Off Delay Time 11.5 ns
Turn-On Delay Time 9.4 ns
Win Source Part Number 965377-BSO083N03MS G
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BSO083N03MS G CAD Model

Description

The Infineon Technologies 965377-BSO083N03MS G is a high-performance N-channel MOSFET transistor designed for RF applications.

  • Maximum Continuous Drain Current: 11 A
  • Drain to Source Breakdown Voltage: 30 V
  • Halogen-Free: Yes
  • RoHS Compliant: Yes
  • Supply and Demand Status: Short Supply
  • Mounting Type: SMD (SMT)
  • Turn-On Delay Time: 9.4 ns
  • Turn-Off Delay Time: 11.5 ns
  • Rise Time: 5 ns
  • Fall Time: 5.4 ns
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Drain to Source Resistance: 8.3 mΩ
  • Input Capacitance: 2.1 nF
  • Pins: 8
  • Power Dissipation: 1.56 W

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