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BSP149 E6327

Part No BSP149 E6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 660MA SOT223-4
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id 1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 1.8W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 819746-BSP149 E6327
Ultra Librarian 3D Model Ultra Librarian BSP149 E6327 CAD Model

Description

The BSP149 E6327 is a single N-channel MOSFET transistor used in discrete semiconductor products from Infineon Technologies.

  • Series: SIPMOS™
  • Package: tape & reel
  • Package Size: 1,000 pieces
  • Technology: MOSFET (Metal Oxide)
  • Drain to source voltage (Vdss): 200 V
  • Continuous drain current (Id): 660mA @ 25°C (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
  • Gate charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
  • Input capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2857 $59.4282
62+ $1.8757 $116.2934
96+ $1.8168 $174.4128
132+ $1.7591 $232.2012
170+ $1.7002 $289.0340
228+ $1.5246 $347.6088
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 122,000 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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