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Same model may have multiple batches, images only for reference.
BSP296L6327HTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSP296L6327HTSA1

Part No BSP296L6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.1A SOT-223
Datasheet
BSP296L6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 400μA
Max Gate Charge 17.2nC @ 10V
Max Input Capacitance 364pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.79W (Ta)
Maximum Rds On at Id,Vgs 700 mOhm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024437-BSP296L6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian BSP296L6327HTSA1 CAD Model

Description

The Infineon Technologies BSP296L6327HTSA1 is a MOSFET transistor designed for power management and industrial applications.

  • Polarity: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 1.1A @ 25°C
  • Maximum Rds On @ Id, Vgs: 700 mOhm @ 1.1A, 10V
  • Gate-Source Threshold Voltage: 1.8V @ 400μA
  • Maximum Gate Charge: 17.2nC @ 10V
  • Maximum Input Capacitance: 364pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-SOT223-4 and TO-261-4, TO-261AA dimensions
  • Mounting: SMD (SMT)
  • Power Dissipation: 1.79W (Ta)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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