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BSP50E6327

Part No BSP50E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 45V 1A SOT223-4
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Package Bulk
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA, 10V
Power - Max 1.5 W
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 709778-BSP50E6327
Ultra Librarian 3D Model Ultra Librarian BSP50E6327 CAD Model

Description

The 709778-BSP50E6327 is a single bipolar transistor from Infineon Technologies.

  • Category: Discrete Semiconductor Products
  • Series: Transistors - Bipolar (BJT) - Single Bipolar Transistors
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Power - Max: 1.5 W
  • Collector Current: 1 A
  • Voltage Breakdown: 45 V
  • Transistor Type: NPN - Darlington
  • Vce Saturation: 1.8V @ 1mA, 1A
  • Cutoff Current: 10μA
  • DC Current Gain: 2000 @ 500mA, 10V
  • Frequency Transition: 200MHz
  • Operating Temperature: -55°C to 150°C
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
330+ $0.1767 $58.3110
795+ $0.1455 $115.6725
1,230+ $0.1409 $173.3070
1,695+ $0.1363 $231.0285
2,195+ $0.1317 $289.0815
2,945+ $0.1178 $346.9210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 44,000 pieces
MOQ: 330 pcs
Order Increment : 1 pcs
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