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BSP716N

Part No BSP716N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 2.3A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 218μA
Max Gate Charge 13.1nC @ 10V
Max Input Capacitance 315pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 160 mOhm @ 2.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 201418-BSP716N
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSP716N CAD Model

Description

BSP716N

The BSP716N delivers exceptional switching performance as a modern N-channel e-MOSFET. Designed for robustness and long-term stability, it is perfect for high-frequency applications that require reliability and efficiency.

Features and Benefits:

  • Outstanding switching speed for rapid operations
  • Rated for high-frequency usage ensuring adaptability
  • Durable build for enhanced longevity

Applications:

  • Telecommunication Equipment
  • Switch Mode Power Supplies (SMPS)
  • High-frequency Inverters
  • Digital Circuitry

With its superior speed and stability, the BSP716N stands out as a vital component for high-frequency and high-efficiency application design.

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