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Same model may have multiple batches, images only for reference.
BSR92PL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSR92PL6327HTSA1

Part No BSR92PL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 0.14A SC-59
Datasheet
BSR92PL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 1V @ 130μA
Max Gate Charge 4.8nC @ 10V
Max Input Capacitance 109pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 11 Ohm @ 140mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SC-59
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024482-BSR92PL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSR92PL6327HTSA1 CAD Model

Description

The Infineon Technologies BSR92PL6327HTSA1 is a P-Channel MOSFET that is designed for use in industrial applications.

  • Technology: MOSFET
  • Polarity: P-Channel
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current @ 25°C: 140mA (Ta)
  • Gate-Source Threshold Voltage: 1V @ 130μA
  • Max Gate Charge: 4.8nC @ 10V
  • Max Input Capacitance: 109pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 11 Ohm @ 140mA, 10V

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