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BSS138WH6327XTSA1

Part No BSS138WH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 280MA SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.4V @ 26μA
Max Gate Charge 1.5nC @ 10V
Max Input Capacitance 43pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 200mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Dimension SC-70, SOT-323
Win Source Part Number 1024501-BSS138WH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS138WH6327XTSA1 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power transistor that can handle a maximum power dissipation of 500mW (Ta).

  • Channel Type: N-channel
  • Power Dissipation: 500mW (Ta)
  • Package: PG-SOT323-3
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 280mA (Ta)
  • Gate-Source Threshold Voltage: 1.4V @ 26μA
  • Category: Discrete semiconductor products
  • Maximum Rds On @ Id,Vgs: 3.5 Ohm @ 200mA, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2376 $51.0840
450+ $0.2226 $100.1700
700+ $0.2151 $150.5700
1,000+ $0.2000 $200.0000
1,300+ $0.1925 $250.2500
1,625+ $0.1850 $300.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,720 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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