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BSZ0905PNSATMA1

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	BSZ0905PNSATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 30V 40A TDSON-8 / P-Channel 30 V 40A (Tc) 69W (Ta) Surface Mount PG-TDSON-8
Datasheet	BSZ0905PNSATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	1.9V @ 105µA
Gate Charge (Qg) (Max) @ Vgs	43.2 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	3190 pF @ 15 V
Power Dissipation (Max)	69W (Ta)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN
Base Product Number	BSZ0905
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	448-BSZ0905PNSATMA1TR,SP005399015,448-BSZ0905PNSATMA1CT,448-BSZ0905PNSATMA1DKR
Standard Package	5,000
Win Source Part Number	971604-BSZ0905PNSATMA1
Ultra Librarian 3D Model	Ultra Librarian BSZ0905PNSATMA1 CAD Model

Alternative Products

Description

The Infineon Technologies BSZ0905PNSATMA1 is a P-Channel MOSFET transistor designed for use in discrete semiconductor products.

Power Rating (Max): 69 W
Drain-Source Voltage (Max): 30 V
Continuous Drain Current: 40 A @ Tc
Rds on: 8.6 mOhm @ 20 A and 10 V
Vgs(th): 1.9 V @ 105 μA
Package Type: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Gate Charge: 43.2 nC @ 10 V
Input Capacitance: 3190 pF @ 15 V
Operating Temperature Range: -55°C to 150°C

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