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BSZ100N06LS3 G

Part No BSZ100N06LS3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 20A TSDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 23μA
Gate Charge (Qg) (Maximum) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3500pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2.1W (Ta), 50W (Tc)
Rds On (Maximum) @ Id, Vgs 10 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TSDSON-8
Package 8-PowerVDFN
Win Source Part Number 770442-BSZ100N06LS3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSZ100N06LS3 G CAD Model

Description

The BSZ100N06LS3 G from Infineon Technologies is an N-Channel MOSFET.

  • Drain-Source Voltage: 60V
  • Continuous Drain Current @ 25°C: 11A
  • Gate-Source Threshold Voltage: 2.2V @ 23μA
  • Maximum Gate Charge: 45nC @ 10V
  • Input Capacitance: 3500pF @ 30V
  • Package: PG-TSDSON-8
  • Power Dissipation (Ta): 2.1W
  • Power Dissipation (Tc): 50W
  • Rds On (Maximum) @ Id,Vgs: 10 mOhm @ 20A, 10V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6841 $51.3075
180+ $0.5613 $101.0340
280+ $0.5438 $152.2640
385+ $0.5263 $202.6255
495+ $0.5087 $251.8065
660+ $0.4561 $301.0260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,100 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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