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Same model may have multiple batches, images only for reference.
BTS110E3045ANTMA1 Real Image
Same model may have multiple batches, images only for reference.

BTS110E3045ANTMA1

Part No BTS110E3045ANTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10A TO-220 / Trans MOSFET N-CH 100V 10A Automotive 3-Pin(2+Tab) TO-220AB SMD T/R
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series TEMPFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Vgs(th) (Maximum) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Maximum) @ Vds 600pF @ 25V
Rds On (Maximum) @ Id, Vgs 200 mOhm @ 5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-220AB
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 770577-BTS110E3045ANTMA1
Popularity Medium
Supply and Demand Status Balance
Family Name BTS110E3045ANTMA1
Introduction Date January 04, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BTS110E3045ANTMA1 CAD Model

Description

The Infineon Technologies BTS110E3045ANTMA1 is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Continuous Drain Current: 10A @ 25°C
  • Maximum Drain-Source Voltage: 100V
  • Gate-Source Threshold Voltage: 3.5V @ 1mA
  • Input Capacitance: 600pF @ 25V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Maximum Power Dissipation: 200mW @ 5A and 10V

This product is obsolete (EOL) and has an estimated EOL date. Alternative parts that can be used as cross-reference include RF1S530SM9A, RF1S530SM, BUK96180-100A, and STB14NF10.

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23+ $5.1883 $119.3309
35+ $5.0263 $175.9205
48+ $4.8641 $233.4768
62+ $4.7019 $291.5178
83+ $4.2155 $349.8865
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