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Same model may have multiple batches, images only for reference.
BTS131E3045ANTMA1
Same model may have multiple batches, images only for reference.

BTS131E3045ANTMA1

Part No BTS131E3045ANTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series TEMPFET®
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 60mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V
Power Dissipation (Max) 75W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 864862-BTS131E3045ANTMA1
Ultra Librarian 3D Model Ultra Librarian BTS131E3045ANTMA1 CAD Model

Description

The BTS131E3045ANTMA1 is a single N-channel MOSFET from Infineon Technologies.

  • Category: Discrete Semiconductor Products
  • Application: FET (Field-Effect Transistor)
  • Drain-to-Source Voltage (Vdss): 50V
  • Continuous Drain Current (Id): 25A @ 25°C
  • On-Resistance (Rds On): 60mOhm @ 12A and 4.5V gate-source voltage (Vgs)
  • Power Dissipation: 75W
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Input Capacitance (Ciss): 1400 pF @ 25V
  • MSL Level: 1
  • REACH: Unaffected

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