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BUZ31 Siemens
Same model may have multiple batches, images only for reference.

BUZ31

Part No BUZ31
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 14.5A TO220-3
Datasheet
BUZ31 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1120 pF @ 25 V
Power Dissipation (Max) 95W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Standard Package 500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 573759-BUZ31
Ultra Librarian 3D Model Ultra Librarian BUZ31 CAD Model

Description

The 573759-BUZ31 is an N-channel MOSFET transistor from the SIPMOS™ series.

  • Series: SIPMOS™
  • Channel Type: N-channel
  • Drain to Source Voltage: 200V
  • Continuous Drain Current Rating: 14.5A @ 25°C
  • Maximum On-Resistance: 200mOhm @ 9A and 5V
  • Gate Threshold Voltage: 4V @ 1mA
  • Power Dissipation: 95W @ case temperature
  • Package Type: TO-220-3
  • Mounting Type: through-hole
  • Status: obsolete
  • Standard Package: 500 pieces

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7228 $50.5960
170+ $0.5930 $100.8100
265+ $0.5745 $152.2425
360+ $0.5560 $200.1600
470+ $0.5374 $252.5780
625+ $0.4819 $301.1875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,756 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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