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Same model may have multiple batches, images only for reference.
BUZ31LHXKSA1
Same model may have multiple batches, images only for reference.

BUZ31LHXKSA1

Part No BUZ31LHXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 200V 13.5A 3-Pin(3+Tab) TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220-3
Contact Plating Tin
Continuous Drain Current (ID) 13.5 A
Drain to Source Breakdown Voltage 200 V
Drain to Source Resistance 200 mΩ
Element Configuration Single
Fall Time 65 ns
Gate to Source Voltage (Vgs) 20 V
Halogen Free Halogen Free
Height 9.45 mm
Input Capacitance 1.6 nF
Length 10.36 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 95 W
Min Operating Temperature -55 °C
Number of Pins 3
Power Dissipation 95 W
Rds On Max 200 mΩ
REACH SVHC No SVHC
Rise Time 80 ns
RoHS Compliant
Threshold Voltage 1.6 V
Turn-Off Delay Time 210 ns
Turn-On Delay Time 25 ns
Width 4.57 mm
Win Source Part Number 1027909-BUZ31LHXKSA1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BUZ31LHXKSA1 CAD Model

Description

The BUZ31LHXKSA1 is a single element configuration transistor manufactured by Infineon Technologies.

  • Channel Type: N-channel MOSFET
  • Package/Case: TO-220-3
  • Maximum Power Dissipation: 95W
  • Continuous Drain Current (ID): 13.5A
  • Drain to Source Breakdown Voltage: 200V
  • Gate to Source Voltage (Vgs): 20V
  • Threshold Voltage: 1.6V
  • Rds On Max: 200mOhm
  • Turn-On Delay Time: 25ns
  • Turn-Off Delay Time: 210ns
  • Rise Time: 80ns
  • Fall Time: 65ns
  • Mounting Style: SMD (SMT)
  • Temperature Range: -55°C to 150°C
  • Halogen-Free: Yes
  • RoHS Compliant: Yes

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