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GS66506T-MR

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Part No	GS66506T-MR
Manufacturer	Infineon Technologies
Catalog	Transistors – FETs, MOSFETs – Single
Description	GS66506T-MR
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Package	Tape & Reel (TR);Cut Tape (CT)
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V
Rds On (Max) @ Id, Vgs	90mOhm @ 6.7A, 6V
Vgs(th) (Max) @ Id	1.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	4.4 nC @ 6 V
Vgs (Max)	+7V, -10V
Input Capacitance (Ciss) (Max) @ Vds	195 pF @ 400 V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, No Lead
Ultra Librarian 3D Model	Ultra Librarian GS66506T-MR CAD Model

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GS66506T-MR

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