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IKW75N60H3 Infineon Technologies IKW75N60H3 real image4681
IKW75N60H3 Infineon Technologies IKW75N60H3 real image4681
Same model may have multiple batches, images only for reference.

IKW75N60H3

Part No IKW75N60H3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 80A 428W TO247-3
Datasheet
IKW75N60H3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 225A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 75A
Maximum Power Dissipation 428W
Total Switching Energy(Ets) 3mJ (on), 1.7mJ (off)
Input Type Standard
Gate Charge 470nC
Turn-on and Turn-off delay time 31ns/265ns
Testing Conditions 400V, 75A, 5.2 Ohm, 15V
Reverse Recovery Time (trr) 190ns
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 087470-IKW75N60H3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IKW75N60H3 CAD Model

Description

The Infineon Technologies IKW75N60H3 is a high-performance trench field stop IGBT with a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 80A.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 80A
  • Input Type: Standard
  • Case/Package: PG-TO247-3
  • Reverse Recovery Time: 190ns
  • Total Switching Energy (On): 3mJ
  • Total Switching Energy (Off): 1.7mJ
  • Turn-On Delay Time: 31ns
  • Turn-Off Delay Time: 265ns

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