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Same model may have multiple batches, images only for reference.
IPA60R180C7 Real Image
Same model may have multiple batches, images only for reference.

IPA60R180C7

Part No IPA60R180C7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 9A, 600V, 0.18OHM, N-CHANNEL MOS
Datasheet
IPA60R180C7 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 400 V
Power Dissipation (Max) 29W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-111
Package / Case TO-220-3 Full Pack
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603290-IPA60R180C7
Ultra Librarian 3D Model Ultra Librarian IPA60R180C7 CAD Model

Description

The 603290-IPA60R180C7 is a CoolMOS™ series transistor from Infineon Technologies.

  • Drain to Source Voltage (Vdss): 600V
  • N-Channel MOSFET (Metal Oxide): Yes
  • Continuous Drain Current (Id) @ 25°C: 9A (Tc)
  • Maximum On-Resistance (Rds On): 180mOhm @ 5.3A and 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 260µA
  • Power Dissipation: 29W (Tc)
  • Mounting Type: Through-Hole
  • Package: TO-220-3 Full Pack
  • Gate Charge (Qg) @ Maximum Voltage (Vgs): 24nC @ 10V
  • Input Capacitance (Ciss) @ Maximum Drain-Source Voltage (Vds): 1080pF @ 400V
  • Maximum Operating Temperature Range: -55°C to 150°C
  • HTSUS Code: 8541.29.0095
  • Product Status: Active

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