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Same model may have multiple batches, images only for reference.
IPA60R280E6 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA60R280E6

Part No IPA60R280E6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 13.8A TO220
Datasheet
IPA60R280E6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 430μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 950pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 32W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 6.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068946-IPA60R280E6
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPA60R280E6 CAD Model

Description

The Infineon Technologies 068946-IPA60R280E6 is a MOSFET component that is suitable for use in discrete semiconductor products.

  • Mounting: Through Hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation (max): 32W (Tc)
  • Drive Voltage (max Rds On, Min Rds On): 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2513 $62.5650
115+ $1.0267 $118.0705
175+ $0.9946 $174.0550
240+ $0.9626 $231.0240
315+ $0.9305 $293.1075
420+ $0.8341 $350.3220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,429 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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