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IPA60R360P7XKSA1

Part No IPA60R360P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 650V 9A TO220  /  N-Channel 650 V 9A (Tc) 22W (Tc) Through Hole PG-TO220 Full Pack
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 400 V
Power Dissipation (Max) 22W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number IPA60R360
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IPA60R360P7XKSA1-448,SP001606040
Standard Package 50
Win Source Part Number 1006783-IPA60R360P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA60R360P7XKSA1 CAD Model

Description

The IPA60R360P7XKSA1 is a MOSFET (Metal Oxide) transistor manufactured by Infineon Technologies.

  • Series: CoolMOS P7
  • Manufacturer Part Number: 1006783-IPA60R360P7XKSA1
  • Drain to Source Voltage (Vdss): 650 V
  • Continuous Drain Current (Id) @ 25°C: 9A (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 140μA
  • Popularity: medium
  • Supply and Demand Status: limited

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