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IPA60R385CP Real Image IPA60R385CP Real Image
Same model may have multiple batches, images only for reference.
IPA60R385CP Real Image IPA60R385CP Real Image
IPA60R385CP Real Image IPA60R385CP Real Image
Same model may have multiple batches, images only for reference.

IPA60R385CP

Part No IPA60R385CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9A TO220-3
Datasheet
IPA60R385CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 340μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 790pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 385 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068951-IPA60R385CP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA60R385CP CAD Model

Description

The Infineon Technologies 068951-IPA60R385CP is an N-Channel MOSFET with a drain-source breakdown voltage of 600V and a continuous drain current of 9A @ 25°C.

  • Maximum Power Dissipation: 31W (Tc)
  • Maximum Rds On: 385 mOhm @ 5.2A, 10V
  • Gate-Source Threshold Voltage: 3.5V @ 340μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Input Capacitance: 790pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO-220-FP case
  • Suitable for: Use in various applications

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