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Same model may have multiple batches, images only for reference.
IPA60R400CEXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA60R400CEXKSA1

Part No IPA60R400CEXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO-220-3 / Trans MOSFET N-CH 600V 14.7A 3-Pin(3+Tab) TO-220FP Tube
Datasheet
IPA60R400CEXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS CE
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 300μA
Gate Charge (Qg) (Maximum) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 700pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 31W (Tc)
Rds On (Maximum) @ Id, Vgs 400 mOhm @ 3.8A, 10V
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-FP
Package TO-220-3 Full Pack
Win Source Part Number 776835-IPA60R400CEXKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPA60R400CE
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IPA60R400CEXKSA1 CAD Model

Description

The IPA60R400CEXKSA1 is a CoolMOS CE series MOSFET manufactured by Infineon Technologies.

  • Package: TO-220-3 Full Pack
  • Mounting Style: Through hole
  • Operating Temperature Range: -40°C ~ 150°C (TJ)
  • Drain-Source Voltage: 600V (maximum)
  • Gate-Source Voltage: ±20V (maximum)
  • Power Dissipation (Tc): 31W (maximum)
  • Continuous Drain Current (Tc): 10.3A @ 25°C
  • Gate Charge: 32nC @ 10V
  • Input Capacitance: 700pF @ 100V
  • Type: N-channel
  • On-State Resistance: 400 mOhm @ 3.8A, 10V (maximum)
  • Compliance: Halogen-free
  • Status: Estimated EOL date is 2029

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