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Same model may have multiple batches, images only for reference.
IPA60R600CP Infineon Technologies
Same model may have multiple batches, images only for reference.

IPA60R600CP

Part No IPA60R600CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.1A TO220-3
Datasheet
IPA60R600CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 220μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 550pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 28W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 068952-IPA60R600CP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA60R600CP CAD Model

Description

The Infineon Technologies IPA60R600CP is an N-Channel MOSFET transistor that is used in various applications. It has a power dissipation of up to 28W (Tc) and is a medium popularity electronic component.

  • Packaging: Tube/Rail
  • Mounting Hole: Through-Hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Win Source Part Number: 068952-IPA60R600CP
  • Supply and Demand Status: Limited
  • Package: PG-TO-220-FP
  • Dimension: TO-220-3 Full Pack
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 6.1A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 220μA
  • Maximum Gate Charge: 27nC @ 10V
  • Maximum Input Capacitance: 550pF @ 100V
  • Maximum Rds On at Id,Vgs: 600 mOhm @ 3.3A, 10V
  • Temperature Range: -55°C to 150°C (TJ)

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